Power MOS device with conductive contact layer

Details Power MOS device with conductive contact layer Power MOS device with conductive contact layer

2011-04-12

2011-04-12

Tran, Thien F (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S332000, C257S334000

Reexamination Certificate

active

07923774

ABSTRACT:
A semiconductor device includes a drain, a body disposed over the drain, a source embedded in the body, a gate trench extending through the source and the body into the drain, a gate disposed in the gate trench, a source body contact trench extending through the source into the body, a conductive contact layer disposed along at least a portion of a source body contact trench sidewall and in contact with at least a portion of the source, and a trench filling material disposed in the source body contact trench and overlaying at least a portion of the conductive contact layer.

REFERENCES:
patent: 4156246 (1979-05-01), Pedersen
patent: 4521795 (1985-06-01), Coe et al.
patent: 4823172 (1989-04-01), Mihara
patent: 4967243 (1990-10-01), Baliga et al.
patent: 4967245 (1990-10-01), Cogan et al.
patent: 5111253 (1992-05-01), Korman et al.
patent: 5164325 (1992-11-01), Cogan et al.
patent: 5366914 (1994-11-01), Takahashi et al.
patent: 5378655 (1995-01-01), Hutchings et al.
patent: 5489787 (1996-02-01), Amaratunga et al.
patent: 5489797 (1996-02-01), Chan et al.
patent: 5576245 (1996-11-01), Cogan et al.
patent: 5614749 (1997-03-01), Ueno
patent: 5623152 (1997-04-01), Majumdar et al.
patent: 5693569 (1997-12-01), Ueno
patent: 5886383 (1999-03-01), Kizner
patent: 6037628 (2000-03-01), Huang
patent: 6110799 (2000-08-01), Huang
patent: 6188105 (2001-02-01), Kocon et al.
patent: 6251730 (2001-06-01), Luo
patent: 6351018 (2002-02-01), Sapp
patent: 6359306 (2002-03-01), Ninomiya
patent: 6433396 (2002-08-01), Kinzer
patent: 6498071 (2002-12-01), Hijzen et al.
patent: 6608350 (2003-08-01), Kinzer et al.
patent: 6621107 (2003-09-01), Blanchard et al.
patent: 6638826 (2003-10-01), Zeng et al.
patent: 6686614 (2004-02-01), Tihanyi
patent: 6707127 (2004-03-01), Hshieh et al.
patent: 6710403 (2004-03-01), Sapp
patent: 6737704 (2004-05-01), Takemori et al.
patent: 6774408 (2004-08-01), Ninomiya
patent: 6784505 (2004-08-01), Zeng
patent: 6818946 (2004-11-01), Venkatraman
patent: 6841836 (2005-01-01), Saggio et al.
patent: 6872611 (2005-03-01), Takemori et al.
patent: 6987305 (2006-01-01), He et al.
patent: 6998678 (2006-02-01), Werner et al.
patent: 7005347 (2006-02-01), Bhalla et al.
patent: 7285822 (2007-10-01), Bhalla et al.
patent: 7446374 (2008-11-01), Thorup et al.
patent: 2001/0009800 (2001-07-01), Hijzen et al.
patent: 2003/0020134 (2003-01-01), Werner et al.
patent: 2004/0012050 (2004-01-01), Uno et al.
patent: 2004/0222457 (2004-11-01), Kim et al.
patent: 2005/0029584 (2005-02-01), Shiraishi et al.
patent: 2005/0167742 (2005-08-01), Challa et al.
patent: 2006/0071268 (2006-04-01), Tai et al.
patent: 2006/0202264 (2006-09-01), Bhalla et al.
patent: 2006/0209887 (2006-09-01), Bhalla et al.
patent: 2006/0214221 (2006-09-01), Challa et al.
patent: 2007/0075392 (2007-04-01), Pan et al.
patent: 2008/0246082 (2008-10-01), Hshieh
patent: 2009/0039456 (2009-02-01), Bhalla et al.
patent: 2009/0212358 (2009-08-01), Shiraishi et al.
patent: 09-102602 (1997-04-01), None
Shannon, J.M., “Control of Schottky barrier height using highly doped surface layers”, Solid-State Electronics vol. 19, No. 6, p. 537-543, Jun. 1976.

Affiliated with

Also associated with

Rating

Power MOS device with conductive contact layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Power MOS device with conductive contact layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Power MOS device with conductive contact layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2692368