Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-06-21
2011-06-21
Landau, Matthew C (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S076000, C257S341000, C257SE27001, C257SE29257
Reexamination Certificate
active
07964911
ABSTRACT:
In a semiconductor element (20) including a field effect transistor (90), a schottky electrode (9a) and a plurality of bonding pads (12S,12G), at least one of the plurality of bonding pads (12S,12G) is disposed so as to be located above the schottky electrode (9a).
REFERENCES:
patent: 5086324 (1992-02-01), Hagino
patent: 5111253 (1992-05-01), Korman et al.
patent: 5253156 (1993-10-01), Sakurai et al.
patent: 5915179 (1999-06-01), Etou et al.
patent: 6476456 (2002-11-01), Boden, Jr.
patent: 2002/0047124 (2002-04-01), Kitabatake
patent: 2002/0190340 (2002-12-01), Moriguchi et al.
patent: 2003/0080355 (2003-05-01), Shirai et al.
patent: 0 899 791 (1999-03-01), None
patent: 1 204 145 (2002-05-01), None
patent: 62-76671 (1987-04-01), None
patent: 62-076671 (1987-04-01), None
patent: 2-126682 (1990-05-01), None
patent: 3-226291 (1991-10-01), None
patent: 5-198816 (1993-08-01), None
patent: 05-198816 (1993-08-01), None
patent: 06-120347 (1994-04-01), None
patent: 6-120347 (1994-04-01), None
patent: 7-115193 (1995-05-01), None
patent: 07-115193 (1995-05-01), None
patent: 09-102607 (1997-04-01), None
patent: 10-136641 (1998-05-01), None
patent: 10-136642 (1998-05-01), None
patent: 11-274482 (1999-10-01), None
patent: 2002-203967 (2002-07-01), None
patent: 2002-373989 (2002-12-01), None
patent: 2003-133557 (2003-05-01), None
patent: 2003-526949 (2003-09-01), None
patent: 2004-289103 (2004-10-01), None
patent: 2005-501408 (2005-01-01), None
patent: 2005-101551 (2005-04-01), None
patent: WO 03/010812 (2003-02-01), None
International Search Report, issued in International Patent Application No. PCT/JP2006/313575, dated on Oct. 3, 2006.
International Search Report, issued in International Patent Application No. PCT/JP2006/314489, dated on Oct. 24, 2006.
U.S. Appl. No. 11/995,072, filed Jan. 8, 2008.
U.S. Appl. No. 11/996,880, filed Jan. 25, 2008.
European Search Report issued in European Patent Application No. 06781411.1, mailed Apr. 6, 2009.
European Search Report issued in European Patent Application No. 06781438.4, mailed Apr. 6, 2009.
European Search Report issued in European Patent Application No. 06767985.2, mailed Apr. 6, 2009.
Belverde, G., et al., “A Low-Voltage MOSFET with Small on-Resistance: an Extended Characterization in High-Efficiency Power Converter Applications”, Conference Record of the 2001 IEEE Industry Applications Conference 36th IAS Annual Meeting, Sep.-Oct. 2001, pp. 635-640, USA.
Kitabatake Makoto
Kusumoto Osamu
Uchida Masao
Yamashita Kenya
Erdem Fazli
Landau Matthew C
McDermott Will & Emery LLP
Panasonic Corporation
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