Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2011-01-18
2011-01-18
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C257S369000
Reexamination Certificate
active
07871941
ABSTRACT:
By providing a silicon cap layer on a compressive silicon nitride layer, the diffusion of nitrogen into sensitive resist material may be efficiently reduced, while the silicon may be converted into a highly compressive silicon dioxide in a later manufacturing stage. Consequently, yield loss due to contact failures during the formation of semiconductor devices requiring differently stressed silicon nitride layers may be reduced.
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Translation of Official Communication from German Patent Office for German Patent Application No. 10 2006 046 381.1-33 dated Jul. 23, 2007.
Frohberg Kai
Richter Ralf
Werner Thomas
Advanced Micro Devices , Inc.
Richards N Drew
Sun Yu-Hsi
Williams Morgan & Amerson P.C.
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