Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2011-04-19
2011-04-19
Sarkar, Asok K (Department: 2891)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
C257SE21017, C257SE21090, C257SE21102, C438S044000, C438S360000, C438S488000, C438S496000, C438S700000
Reexamination Certificate
active
07927977
ABSTRACT:
A method of making a semiconductor device includes forming a first layer comprising a seed material over an underlying layer, forming a second layer comprising a sacrificial material over the first layer, the sacrificial material being different from the seed material, patterning the first layer and the second layer into a plurality of separate features, forming an insulating filling material between the plurality of the separate features, removing the sacrificial material from the separate features to form a plurality of openings in the insulating filling material such that the seed material is exposed in the plurality of openings, and growing a semiconductor material on the exposed seed material in the plurality of openings.
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Dunton Vance
Makala Raghuveer S.
Maxwell Steven
Radigan Steven J.
Tanaka Yoichiro
SanDisk 3D LLC
Sarkar Asok K
The Marbury Law Group PLLC
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