Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2011-04-19

2011-04-19

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S660000, C438S672000, C438S675000, C438S684000, C257S377000, C257S520000, C257SE21585, C257SE21593

Reexamination Certificate

active

07928008

ABSTRACT:
A fabricating method of a polysilicon layer is disclosed which can be applied for fabricating a semiconductor device such as a SRAM and so on. The method for fabricating the semiconductor device includes the steps of: forming a transistor included in the semiconductor device on a semi conductor substrate forming an insulating layer on the transistor; forming contact holes, through which a region of the transistor is exposed, by selectively removing the insulating layer forming a silicon layer in the contact holes forming a metal layer on the insulating layer and the silicon layer; forming a metal suicide layer through heat treatment of the silicon layer and the metal layer; removing the metal layer; forming an amorphous silicon layer on the insulating layer and the metal suicide layer; and forming a polysilicon layer through heat treatment of the amorphous silicon layer.

REFERENCES:
patent: 4272880 (1981-06-01), Pashley
patent: 4727045 (1988-02-01), Cheung et al.
patent: 5041884 (1991-08-01), Kumamoto et al.
patent: 5128732 (1992-07-01), Sugahara et al.
patent: 5534460 (1996-07-01), Tseng et al.
patent: 5587338 (1996-12-01), Tseng
patent: 5599736 (1997-02-01), Tseng
patent: 5624863 (1997-04-01), Helm et al.
patent: 5670812 (1997-09-01), Adler et al.
patent: 5804470 (1998-09-01), Wollesen
patent: 6172381 (2001-01-01), Gardner et al.
patent: 6259118 (2001-07-01), Kadosh et al.
patent: 6358828 (2002-03-01), Kadosh et al.
patent: 6429484 (2002-08-01), Yu
patent: 6596573 (2003-07-01), Lee
patent: 6600173 (2003-07-01), Tiwari
patent: 6607949 (2003-08-01), Kim
patent: 6635552 (2003-10-01), Gonzalez
patent: 6638834 (2003-10-01), Gonzalez
patent: 6815267 (2004-11-01), So
patent: 6887753 (2005-05-01), Gonzalez
patent: 6927431 (2005-08-01), Gonzalez
patent: 6964896 (2005-11-01), Gonzalez
patent: 7067909 (2006-06-01), Reif et al.
patent: 7115451 (2006-10-01), Gonzalez
patent: 7151041 (2006-12-01), Gonzalez
patent: 7250680 (2007-07-01), Gonzalez
patent: 7312487 (2007-12-01), Alam et al.
patent: 7326960 (2008-02-01), Gonzalez
patent: 2002/0036351 (2002-03-01), Suh et al.
patent: 2003/0059999 (2003-03-01), Gonzalez
patent: 2003/0077858 (2003-04-01), Lian et al.
patent: 2003/0173654 (2003-09-01), Rodgers et al.
patent: 2004/0266206 (2004-12-01), Cleeves
patent: 2005/0287793 (2005-12-01), Blanchet et al.
patent: 2006/0071074 (2006-04-01), Konevecki et al.
patent: 1998-056170 (1998-09-01), None
patent: 10-2005-37783 (2005-04-01), None
patent: 10-2005-117132 (2005-12-01), None
patent: 0130380 (2008-04-01), None

Affiliated with

Also associated with

Rating

Method for fabricating semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2689632