Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-05-17
2011-05-17
Lebentritt, Michael S (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S636000, C438S642000, C438S686000, C438S723000, C438S732000, C257SE21581, C257SE21586, C257SE21596, C257SE23114, C257SE23159
Reexamination Certificate
active
07943518
ABSTRACT:
A semiconductor chip comprising a capacitor capable of effectively controlling the voltage drop of an LSI is provided. A semiconductor substrate is provided with an element electrode having at least its surface constituted of an aluminum electrode. The surface of the aluminum electrode is roughened. An oxide film is provided on the aluminum electrode. A conductive film is provided on the oxide film. The aluminum electrode, oxide film and conductive film form a capacitor.
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Hirano Koichi
Nakatani Seiichi
Ogura Tetsuyoshi
Lebentritt Michael S
McDermott Will & Emery LLP
Panasonic Corporation
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