Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2011-06-28
2011-06-28
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S482000, C257SE21021, C257SE21054
Reexamination Certificate
active
07968436
ABSTRACT:
Copper diffusion barrier films having low dielectric constants are suitable for a variety of copper/inter-metal dielectric integration schemes. Copper diffusion barrier films in accordance with the invention are composed of one or more layers of silicon carbide, at least one of the silicon carbide layers having a composition of at least 40% carbon (C), for example, between about 45 and 60% carbon (C). The films' high carbon-content layer will have a composition wherein the ratio of C to Si is greater than 2:1; or >3:1; or >4:1; or >5.1. The high carbon-content copper diffusion barrier films have a reduced effective k relative to conventional barrier materials.
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Billington Karen
Carris Michael
Crew William
Fu Haiying
Tang Xingyuan
Estrada Michelle
Novellus Systems Inc.
Weaver Austin Villeneuve & Sampson LLP
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