Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-07-12
2011-07-12
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S066000, C257S141000, C257S197000
Reexamination Certificate
active
07977752
ABSTRACT:
In a lateral bipolar transistor including an emitter, a base and a collector which are formed in a semiconductor thin film formed on an insulating substrate, the semiconductor thin film is a semiconductor thin film which is crystallized in a predetermined direction. In addition, in a MOS-bipolar hybrid transistor formed in a semiconductor thin film formed on an insulating substrate, the semiconductor thin film is a semiconductor thin film which is crystallized in a predetermined direction.
REFERENCES:
patent: 5508550 (1996-04-01), Morishita et al.
patent: 5510647 (1996-04-01), Nakajima et al.
patent: 7646019 (2010-01-01), Kimura
patent: 2002-176350 (2002-06-01), None
patent: 2003-76345 (2003-03-01), None
patent: 2004-327854 (2004-11-01), None
patent: 2005-18088 (2005-01-01), None
patent: WO 03/092061 (2003-11-01), None
U.S. Appl. No. 11/834,372, filed Aug. 6, 2007, Kawachi.
B-Y. Tsaur, et al., “Fully Isolated Lateral Bipolar-MOS Transistors Fabricated in Zone-Melting-Recrystallized Si Films on SiO2” IEEE Electron Device Letters, vol. EDL-4, No. 8, Aug. 1983, pp. 269-271.
James C. Sturm, et al., “A Lateral Silicon-on-Insulator Bipolar Transistor with a Slef-Aligned Base Contract,” 0741-3106/87/0300-0104, IEEE, 1987, 3 pages.
Stephen Parke, et al., “A Versatile, SOI BiCMOS Technology with Complementary Lateral BJT's,” IEDM, IEEE 1992, pp. 453-456.
T. Shino, et al., A 31 GHzƒmaxLateral BJT on SOI Using Self-Aligned External Base Formation Technology IEDM, IEEE, 1998, pp. 953-956.
Richard McCartney, et al., “9.3: WhisperBus™: An Advanced Interconnect Link For TFT Column Driver Data,” SID 01 Digest, pp. 1-4.
U.S. Appl. No. 12/846,437, filed Jul. 29, 2010, Kawachi.
U.S. Appl. No. 12/846,392, filed Jul. 29, 2010, Kawachi.
Advanced LCD Technologies Development Center Co. Ltd.
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Vu Hung
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