Spin valve element driving method and spin valve element

Details Spin valve element driving method and spin valve element Spin valve element driving method and spin valve element

2011-04-12

2011-04-12

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S158000, C365S170000, C365S173000, C365S172000

Reexamination Certificate

active

07924609

ABSTRACT:
A spin valve element driving method, and a spin valve element employing such a method, for causing microwave oscillation in a spin valve element. The spin valve element includes an intermediate layer and a pair of ferromagnetic layers including a fixed layer and a free layer sandwiching the intermediate layer, the fixed layer having a higher coercivity than the free layer, and being magnetized in a direction substantially perpendicular to a film plane thereof. The method includes a driving step of passing current from one of the pair of ferromagnetic layers to the other through the intermediate layer.

REFERENCES:
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patent: 2005/0034017 (2005-02-01), Airaud et al.
patent: 2005/0219771 (2005-10-01), Sato et al.
patent: 2001-084756 (2001-03-01), None
patent: 2007-124340 (2007-05-01), None
patent: WO-2006-101040 (2006-09-01), None
Yoshishige Suzuki et al., “Microwave Properties of Spin Injection Device—Spontaneous Oscillation, Spin-Torque Diode Effect and Magnetic Noise”, Magnetics Japan, Jun. 1, 2007, vol. 2, No. 6, pp. 282 to 290. Cited in Intl Search Report.

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