Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2011-08-23

2011-08-23

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S003000, C438S396000, C257S295000, C257S071000, C257S300000, C257S306000, C257S532000, C257SE27034, C257SE27087, C257SE21008, C257SE21664, C257SE23002, C257SE27104, C365S049130, C365S049120

Reexamination Certificate

active

08004030

ABSTRACT:
Provided is a semiconductor device that includes: a base insulating film25formed above a silicon substrate10; a ferroelectric capacitor Q formed on the base insulating film25; multiple interlayer insulating films35, 48,and62,and metal interconnections45, 58,and72which are alternately formed on and above the capacitor Q; and conductive plugs57which are respectively formed inside holes54aprovided in the interlayer insulating films48and are electrically connected to the metal interconnections45. In the semiconductor device, a first capacitor protection insulating film50is formed on an upper surface of the interlayer insulating film48by sequentially stacking a first insulating metal oxide film50a,an intermediate insulating film50bhaving a relative dielectric constant lower than that of the interlayer insulating film48,and a second insulating metal oxide film50c; and the holes54aare also formed in the first capacitor protection insulating film50.

REFERENCES:
patent: 6548343 (2003-04-01), Summerfelt et al.
patent: 7232764 (2007-06-01), Yaegashi
patent: 2005/0285173 (2005-12-01), Nagai et al.
patent: 5-074921 (1993-03-01), None
patent: 2001-244426 (2001-09-01), None
patent: 2006-049795 (2006-02-01), None
International Search Report of PCT/JP2007/053210, Mailing Date of May 15, 2007.

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