Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-01-25
2011-01-25
Sarkar, Asok K (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21159, C257SE21627, C257SE21641, C438S098000, C438S233000, C438S256000, C438S586000
Reexamination Certificate
active
07875542
ABSTRACT:
It is required that a line width of a wiring is prevented from being wider to be miniaturized when the wiring or the like is formed by a dropping method typified by an ink-jetting method. The invention provides a method for narrowing (miniaturizing) a line width according to a method different from a conventional method. One feature of the invention is that a plasma treatment is performed before forming a wiring or the like by a dropping method typified by an ink-jetting method. As the result of the plasma treatment, a surface for forming a conductive film is modified to be liquid-repellent. Consequently, a wiring or the like formed by a dropping method can be miniaturized.
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Maekawa Shinji
Muranaka Koji
Husch Blackwell LLP Welsh & Katz
Sarkar Asok K
Semiconductor Energy Laboratory Co,. Ltd.
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