Method of programming a memory device of the one-time...

Details Method of programming a memory device of the one-time... Method of programming a memory device of the one-time...

2011-07-12

2011-07-12

Nguyen, Tuan T (Department: 2824)

Static information storage and retrieval

Systems using particular element

Capacitors

C365S094000, C365S096000, C365S102000

Reexamination Certificate

active

07978502

ABSTRACT:
A memory device of the irreversibly electrically programmable type is provided with a memory cell having a dielectric zone disposed between a first electrode and second electrode. An access transistor is connected in series with the second electrode, and an auxiliary transistor is connected in series with the first electrode. The auxiliary transistor is biased to have a saturation current which is lower than a saturation current of the access transistor when both the auxiliary and access transistors are actuated. A number of the memory cells are arranged in a memory plane to form the memory device.

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