Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-23
2011-08-23
Nguyen, Cuong Q (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S605000
Reexamination Certificate
active
08004041
ABSTRACT:
A semiconductor device for surge protection having high surge resistance is provided. A semiconductor substrate (10) included in the semiconductor device for surge protection according to the present invention includes a high concentration first conductivity type semiconductor substrate (1), a low concentration first conductivity type semiconductor layer (2), a high concentration first conductivity type semiconductor layer (4), a second conductivity type semiconductor layer (3), and a cylindrical low concentration second conductivity type semiconductor layer (5) that extends from a surface of the low concentration first conductivity type semiconductor layer (2) into the low concentration first conductivity type semiconductor layer (2) so as to share an axis with the high concentration first conductivity type semiconductor layer (4), and has an interface (J4) with the high concentration first conductivity type semiconductor layer (4) and an interface (J5) with the second conductivity type semiconductor layer (3). Further, the low concentration second conductivity type semiconductor layer (5) has an impurity concentration lower than an impurity concentration of the second conductivity type semiconductor layer (3).
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Hamre Schumann Mueller & Larson P.C.
Nguyen Cuong Q
Panasonic Corporation
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