Method for fabricating a semiconductor device

Details Method for fabricating a semiconductor device Method for fabricating a semiconductor device

2011-04-26

2011-04-26

Jackson, Jr., Jerome (Department: 2815)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S787000, C257SE21575

Reexamination Certificate

active

07932187

ABSTRACT:
A semiconductor device has a first interlayer insulating film formed on a substrate, having a first interconnection buried therein, and having a depressed portion and an insulating barrier film formed on the first interlayer insulating film. A second interlayer insulating film is formed to fill in the depressed portion, cover the upper surface of the insulating barrier film, and have a second interconnection buried therein.

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Japanese Notice of Reasons for Rejection, w/ English translation thereof, issued in Japanese Patent Application No. JP 2004-301171 dated Jun. 22, 2010.

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