Method for making thin film transistor

Details Method for making thin film transistor Method for making thin film transistor

2011-05-24

2011-05-24

Garber, Charles (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S182000, C257S241000, C257S266000, C257SE21411, C257SE23145, C257SE33012, C257SE51040, C977S708000, C977S720000, C977S723000, C977S742000, C977S743000, C977S750000, C977S751000, C977S779000, C977S784000, C977S789000, C977S796000

Reexamination Certificate

active

07947542

ABSTRACT:
A method for making a thin film transistor, the method comprising the steps of: (a) providing a carbon nanotube array and an insulating substrate; (b) pulling out a carbon nanotube film from the carbon nanotube array by using a tool; (c) placing at least one carbon nanotube film on a surface of the insulating substrate, to form a carbon nanotube layer thereon; (d) forming a source electrode and a drain electrode; wherein the source electrode and the drain electrode being spaced therebetween, and electrically connected to the carbon nanotube layer; and (e) covering the carbon nanotube layer with an insulating layer, and a gate electrode being located on the insulating layer.

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