Method of manufacturing a non-volatile memory device

Details Method of manufacturing a non-volatile memory device Method of manufacturing a non-volatile memory device

2011-07-12

2011-07-12

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S257000, C438S261000, C438S592000

Reexamination Certificate

active

07977227

ABSTRACT:
A method of manufacturing a non-volatile semiconductor memory device includes forming a sub-gate without an additional mask. A low word-line resistance is formed by a metal silicide layer on a main gate of the memory device. In operation, application of a voltage to the sub-gate forms a transient state inversion layer that serves as a bit-line, so that no implantation is required to form the bit-line.

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