Semiconductor contact device

Details Semiconductor contact device Semiconductor contact device

2011-04-26

2011-04-26

Nguyen, Khiem D (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S390000, C257SE21507, C257SE21645, C438S618000, C438S622000

Reexamination Certificate

active

07932557

ABSTRACT:
The invention provides an advanced metallization technique for fabricating a memory cell array on a substrate. The array is fabricated by forming discrete and self-aligned vias in a first layer disposed over the array to form contacts to each of the source and drain junction in the array. Further, self-aligned local area slotted vias are formed in a second layer that is disposed over the first layer to form local area interconnects that electrically shunt all of the source contacts/junctions. Further, discrete self-aligned drain extensions are formed over each of the formed drain contacts to electrically connect the junctions, and source contacts to the extensions. The formed vias, extensions, and slotted local area vias are simultaneously plugged and filled with a conductive material to form the memory cell array.

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