Film formation apparatus and method for using the same

Details Film formation apparatus and method for using the same Film formation apparatus and method for using the same

2011-08-09

2011-08-09

Markoff, Alexander (Department: 1711)

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

C134S018000, C134S026000, C134S030000, C134S022180, C156S345370, C156S345520, C156S345530, C118S7230AN, C118S724000, C118S070000, C438S905000

Reexamination Certificate

active

07993705

ABSTRACT:
A method for using a film formation apparatus includes performing film formation of a product film selected from the group consisting of a silicon nitride film and a silicon oxynitride film on a target substrate within a reaction chamber of the film formation apparatus; and unloading the target substrate from the reaction chamber. Thereafter, the method includes first heating an inner surface of the reaction chamber at a post process temperature while supplying a post process gas for nitridation into the reaction chamber, thereby performing nitridation of a by-product film deposited on the inner surface of the reaction chamber; then rapidly cooling the inner surface of the reaction chamber, thereby cracking the by-product film by a thermal stress; and then forcibly exhausting gas from inside the reaction chamber to carry the by-product film, thus peeled off from the inner surface.

REFERENCES:
patent: 6573178 (2003-06-01), Nakamura
patent: 6905549 (2005-06-01), Okuda et al.
patent: 7094708 (2006-08-01), Kato et al.
patent: 2005/0255712 (2005-11-01), Kato et al.
patent: 2006/0141782 (2006-06-01), Hasebe et al.
patent: 2006065513 (2006-06-01), None
Chinese Office Action mailed on Mar. 3, 2010 for Chinese Application No. 200710126883.0 w/partial English translation.

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