Snapback capable NLDMOS, DMOS and extended voltage NMOS devices

Details Snapback capable NLDMOS, DMOS and extended voltage NMOS devices Snapback capable NLDMOS, DMOS and extended voltage NMOS devices

2011-03-29

2011-03-29

Wojciechowicz, Edward (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S122000, C257S133000, C257S137000, C257S328000, C257S355000, C361S056000

Reexamination Certificate

active

07915678

ABSTRACT:
In an NLDMOS, DMOS and NMOS device, the ability is provided for withstanding snapback conditions by providing one or more p+ emitter regions interdigitated between drain regions having drain contacts and electrically connecting the drain contacts to contacts of the emitter regions.

REFERENCES:
patent: 6911679 (2005-06-01), Vashchenko et al.
patent: 2004/0027745 (2004-02-01), Kunz et al.

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