Redundant temperature sensor for semiconductor processing...

Thermal measuring and testing – Temperature measurement – By electrical or magnetic heat sensor

Reexamination Certificate

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C374S141000, C136S236100, C136S227000

Reexamination Certificate

active

07993057

ABSTRACT:
Systems are provided for measuring temperature in a semiconductor processing chamber. Embodiments provide a multi-junction thermocouple comprising a first junction and a second junction positioned to measure temperature at substantially the same portion of a substrate. A controller may detect failures in the first junction, the second junction, a first wire pair extending from the first junction, or a second wire pair extending from the second junction. The controller desirably responds to a detected failure of the first junction or first wire pair by selecting the second junction and second wire pair. Conversely, the controller desirably responds to a detected failure of the second junction or second wire pair by selecting the first junction and first wire pair. Systems taught herein may permit accurate and substantially uninterrupted temperature measurement despite failure of a junction or wire pair in a thermocouple.

REFERENCES:
patent: 154695 (1874-09-01), Manly
patent: 3011006 (1961-11-01), Nicholson
patent: 3417618 (1968-12-01), Morrisette
patent: 4075036 (1978-02-01), Lysikov et al.
patent: 4377347 (1983-03-01), Hanmyo et al.
patent: 4592307 (1986-06-01), Jolly
patent: 4692556 (1987-09-01), Bollen et al.
patent: 4976996 (1990-12-01), Monkowski et al.
patent: 4978567 (1990-12-01), Miller
patent: 4984904 (1991-01-01), Nakano et al.
patent: 5027746 (1991-07-01), Frijlink
patent: 5065698 (1991-11-01), Koike
patent: 5104514 (1992-04-01), Quartarone
patent: 5228114 (1993-07-01), Suzuki
patent: 5246500 (1993-09-01), Samata et al.
patent: 5271967 (1993-12-01), Kramer et al.
patent: 5315092 (1994-05-01), Takahashi et al.
patent: 5336327 (1994-08-01), Lee
patent: 5360269 (1994-11-01), Ogawa et al.
patent: 5421893 (1995-06-01), Perlov
patent: 5456761 (1995-10-01), Auger et al.
patent: 5474618 (1995-12-01), Allaire
patent: 5493987 (1996-02-01), McDiarmid et al.
patent: 5514439 (1996-05-01), Sibley
patent: 5562774 (1996-10-01), Breidenbach et al.
patent: 5571333 (1996-11-01), Kanaya
patent: 5788799 (1998-08-01), Steger et al.
patent: 5902407 (1999-05-01), deBoer et al.
patent: 5904778 (1999-05-01), Lu et al.
patent: 5910221 (1999-06-01), Wu
patent: 6056823 (2000-05-01), Sajoto et al.
patent: 6066209 (2000-05-01), Sajoto et al.
patent: 6120640 (2000-09-01), Shih et al.
patent: 6129808 (2000-10-01), Wicker et al.
patent: 6170429 (2001-01-01), Schoepp et al.
patent: 6227140 (2001-05-01), Kennedy et al.
patent: 6239351 (2001-05-01), Hall, Jr.
patent: 6325858 (2001-12-01), Wengert et al.
patent: 6342691 (2002-01-01), Johnsgard et al.
patent: 7008802 (2006-03-01), Lu
patent: 7166165 (2007-01-01), Halpin
patent: 2003/0035905 (2003-02-01), Lieberman et al.
patent: 2005/0259719 (2005-11-01), Phillips
patent: 2006/0227849 (2006-10-01), Phillips
patent: 2007/0286255 (2007-12-01), Toyoshima
patent: 2008/0013598 (2008-01-01), Perotti et al.
patent: 2009/0052498 (2009-02-01), Halpin et al.
patent: 2009/0147819 (2009-06-01), Goodman et al.
patent: 0 229 488 (1986-12-01), None
patent: 0 723 141 (1996-07-01), None
patent: 1 236 601 (1971-06-01), None
patent: 5-64627 (1993-05-01), None
patent: WO 95/31582 (1995-11-01), None
patent: WO 97/06288 (1997-02-01), None
patent: WO 99/23276 (1999-05-01), None
patent: WO 01/11223 (2001-02-01), None
patent: WO 01/78115 (2001-10-01), None
International Preliminary Report on Patentability and Written Opinion, issued Jul. 1, 2010 in 7 pages, PCT Application No. PCT/US2008/080810, International Filing Date of Oct. 22, 2008.
Introduction to Materials Science for Engineers, 3rdEd. James F. Shackelford, pp. 398, Macmillan Publishing Co. (1992).
Linke, J. and Vietzke, E., “Behavior of Boron Doped Graphites, Plasma Sprayed Boron Carbides and a-C/B:H as Plasma Facing Material,”J. Fusion Tech. V.20, pp. 228-231 (Sep. 1991).
Ponnekanti et al., “Failure mechanisms of anodized aluminum parts used in chemical vapor deposition chambers,”J. Vac. Sci. Technol. A 14(3) (May 1, 1996).
“Thermocouples for Silicon Process Technologies,” Vulcan Electric Company brochure.
“Thermocouples for the Semiconductor Industry” Engelhard Corporation brochure (2004).

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