Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-03-01
2011-03-01
Sandvik, Benjamin P (Department: 2826)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C257SE21568
Reexamination Certificate
active
07897443
ABSTRACT:
The present invention provides a production method of a semiconductor device, which can improve characteristics of a semiconductor element including a single crystal semiconductor layer formed by transferring on an insulating substrate. The present invention is a production method of a semiconductor device comprising a single crystal semiconductor layer formed on an insulating substrate, the production method comprising the steps of: implanting a substance for separation into a single crystal semiconductor substrate, thereby forming a separation layer; transferring a part of the single crystal semiconductor substrate, separated at the separation layer, onto the insulating substrate, thereby forming the single crystal semiconductor layer; forming a hydrogen-containing layer on at least one side of the single crystal semiconductor layer; and diffusing hydrogen from the hydrogen-containing layer to the single crystal semiconductor layer.
REFERENCES:
patent: 5627085 (1997-05-01), Gosain et al.
patent: 6225192 (2001-05-01), Aspar et al.
patent: 6335231 (2002-01-01), Yamazaki et al.
patent: 7183179 (2007-02-01), Droes et al.
patent: 7262464 (2007-08-01), Takafuji et al.
patent: 7425475 (2008-09-01), Fukushima et al.
patent: 7436027 (2008-10-01), Ogawa et al.
patent: 7563693 (2009-07-01), Fukushima et al.
patent: 2002/0137265 (2002-09-01), Yamazaki et al.
patent: 2003/0183876 (2003-10-01), Takafuji et al.
patent: 2004/0029338 (2004-02-01), Yamazaki et al.
patent: 2004/0061176 (2004-04-01), Takafuji et al.
patent: 2004/0099915 (2004-05-01), Takayama et al.
patent: 2005/0009252 (2005-01-01), Yamazaki et al.
patent: 2005/0026434 (2005-02-01), Huy et al.
patent: 05-235038 (1993-09-01), None
patent: 06-077484 (1994-03-01), None
patent: 08-032077 (1996-02-01), None
patent: 2000-150905 (2000-05-01), None
patent: 2001-093853 (2001-04-01), None
patent: 2003-282885 (2003-10-01), None
patent: 2004-165600 (2004-06-01), None
patent: 2004-363627 (2004-12-01), None
patent: 2005-026472 (2005-01-01), None
International Search Report for PCT/JP2006/300537 mailed Apr. 25, 2006 (English and Japanese).
Bruel, “Silicon on insulator material technology,” Electronics Letters, Institute of Electrical and Electronic Engineers, Jul. 6, 1995, vol. 31, No. 14, pp. 1201-1202.
Bruel et al., “Smart-Cut: A New Silicon on Insulator Material Technology Based on Hydrogen Implantation and Wafer Bonding,” Japanese Journal of Applied Physics, the Japan Society of Applied Physics, Mar. 1997, vol. 36, pp. 1636-1641.
Droes Steven Roy
Moriguchi Masao
Takafuji Yutaka
Nixon & Vanderhye P.C.
Sandvik Benjamin P
Sharp Kabushiki Kaisha
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