Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-08-16
2011-08-16
Nguyen, Thanh (Department: 2893)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S479000, C438S482000, C438S488000, C257SE21090, C257SE21412
Reexamination Certificate
active
07998800
ABSTRACT:
A method for manufacturing a semiconductor device is provided, which comprises at least a steps of forming a gate insulating film over a substrate, a step of forming a microcrystalline semiconductor film over the gate insulating film, and a step of forming an amorphous semiconductor film over the microcrystalline semiconductor film. The microcrystalline semiconductor film is formed by introducing a silicon hydride gas or a silicon halide gas when a surface of the gate insulating film is subjected to hydrogen plasma to generate a crystalline nucleus over the surface of the gate insulating film, and by increasing a flow rate of the silicon hydride gas or the silicon halide gas.
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Nguyen Thanh
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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