Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2011-01-04
2011-01-04
Le, Thong Q (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
C365S185290, C365S185180, C365S185260
Reexamination Certificate
active
07864582
ABSTRACT:
Methods of operating a charge trap nonvolatile memory device include operations to erase a first string of nonvolatile memory cells by selectively erasing a first plurality of nonvolatile memory cells in the first string and then selectively erasing a second plurality of nonvolatile memory cells in the first string, which may be interleaved with the first plurality of nonvolatile memory cells. This operation to selectively erase the first plurality of nonvolatile memory cells may include erasing the first plurality of nonvolatile memory cells while simultaneously biasing the second plurality of nonvolatile memory cells in a blocking condition that inhibits erasure of the second plurality of nonvolatile memory cells. The operation to selectively erase the second plurality of nonvolatile memory cells may include erasing the second plurality of nonvolatile memory cells while simultaneously biasing the first plurality of nonvolatile memory cells in a blocking condition that inhibits erasure of the first plurality of nonvolatile memory cells.
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Choi Jung-dal
Lee Chang-Hyun
Lim Young-ho
Suh Kang-Deog
Le Thong Q
Myers Bigel & Sibley & Sajovec
Samsung Electronics Co,. Ltd.
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