Method for fabricating bitline in semiconductor device

Details Method for fabricating bitline in semiconductor device Method for fabricating bitline in semiconductor device

2011-04-26

2011-04-26

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S238000, C438S241000, C438S652000, C257SE21656, C257SE21657, C257SE21658

Reexamination Certificate

active

07932168

ABSTRACT:
A method of a fabricating a bitline in a semiconductor device, comprising: forming an interlayer insulation layer that defines a bitline contact hole on a semiconductor substrate; forming a contact layer to fill the bitline contact hole; forming a bitline contact by planarizing the contact layer; forming a bitline stack aligned with the bitline contact; forming a high aspect ratio process (HARP) layer that extends along the bitline stack and the interlayer insulation layer while covering a seam exposed in a side portion of the bitline stack by excessive planarization during formation of the bitline contact; and forming an interlayer gap-filling insulation layer on the HARP layer that gap-fills the entire bitline stack.

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patent: 2009/0218610 (2009-09-01), Goo et al.
patent: 2010/0219530 (2010-09-01), Ryu

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