Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2011-05-31
2011-05-31
Nguyen, Thinh T (Department: 2818)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S082000, C438S099000, C257S040000
Reexamination Certificate
active
07951618
ABSTRACT:
The present invention is related to a luminescent material generated by polymerization of a pyrromethene complex by glow discharge. The polymer material of the present invention exhibits semi-conductive properties and has a luminescence maximum in a spectrum region in the range of about 540 nm to about 585 nm with a half-width of the luminescence band in the range of about 55 nm to about 75 nm, a quantum yield of photoluminescence in the range of about 0.6 to about 0.8, and an electric conductivity at a temperature of about 20° C. in the range of about 1×10−10S/cm to about 5×10−10S/cm. The resultant polymer layer has a thickness in the range of about 0.01 μm to about 10 μm on a substrate placed between or on any of the electrodes. The starting pyrromethene complex may be a 1,3,5,7,8-pentamethyl-2, 6-diethylpyrromethene difluoroborate complex (pyrromethene 567). Additionally, the luminescent polymer material may be formed as a layer on a substrate having conductive coating, such as a metal, a dielectric material or semi-conductive material, for example.
REFERENCES:
patent: 6661023 (2003-12-01), Hoag et al.
Drachev Alexandr Ivanovich
Ghilman Alla Borisovna
Kuznetsov Alexandr Alexeevich
Surin Nikolay Mikhaylovich
Innovation Counsel LLP
N.S. Enikolopov Institute of Synthetic Polymer Materials of Russ
Nguyen Thinh T
Samsung Electronics Co,. Ltd.
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