Non-volatile memory with sidewall channels and raised...

Details Non-volatile memory with sidewall channels and raised... Non-volatile memory with sidewall channels and raised...

2011-03-29

2011-03-29

Warren, Matthew E (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S321000, C257S326000, C257SE29129, C257SE29300

Reexamination Certificate

active

07915664

ABSTRACT:
A non-volatile storage system in which a sidewall insulating layer of a floating gate is significantly thinner than a thickness of a bottom insulating layer, and in which raised source/drain regions are provided. During programming or erasing, tunneling occurs predominantly via the sidewall insulating layer and the raised source/drain regions instead of via the bottom insulating layer. The floating gate may have a uniform width or an inverted T shape. The raised source/drain regions may be epitaxially grown from the substrate, and may include a doped region above an undoped region so that the channel length is effectively extended from beneath the floating gate and up into the undoped regions, so that short channel effects are reduced. The ratio of the thicknesses of the sidewall insulating layer to the bottom insulating layer may be about 0.3 to 0.67.

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