Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2011-08-16
2011-08-16
Ngo, Ngan (Department: 2893)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S291000, C438S289000, C438S217000, C257SE21417
Reexamination Certificate
active
07998849
ABSTRACT:
A low resistance layer is formed on a semiconductor substrate, and a high resistance layer formed on the low resistance layer. A source region of a first conductivity type is formed on a surface region of the high resistance layer. A drain region of the first conductivity type is formed at a distance from the source region. A first resurf region of the first conductivity type is formed in a surface region of the high resistance layer between the source region and the drain region. A channel region of a second conductivity type is formed between the source region and the first resurf region. A gate insulating film is formed on the channel region, and a gate electrode formed on the gate insulating film. An impurity concentration in the channel region under the gate electrode gradually lowers from the source region toward the first resurf region.
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Office Action issued Mar. 1, 2011, in Japanese Patent Application No. 2005-237763 (with English-language Translation).
Kawaguchi Yusuke
Matsudai Tomoko
Matsushita Ken'ichi
Yasuhara Norio
Kabushiki Kaisha Toshiba
Liu Benjamin Tzu-Hung
Ngo Ngan
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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