Semiconductor device and process for manufacturing same

Details Semiconductor device and process for manufacturing same Semiconductor device and process for manufacturing same

2011-07-26

2011-07-26

Mandala, Victor (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21619, C438S589000, C438S638000

Reexamination Certificate

active

07986012

ABSTRACT:
A semiconductor device100includes a first gate210, which is formed using a gate last process. The first gate210includes a gate insulating film formed in a bottom surface in a first concave portion formed in the insulating film; a gate electrode formed over the gate insulating film in the first concave portion; and a protective insulating film140formed on the gate electrode in the first concave portion. In addition, the semiconductor device100includes a contact134, which is coupled to the N-type impurity-diffused region116ain the both sides of the first gate210and is buried in the second concave portion having a diameter that is large than the first concave portion.

REFERENCES:
patent: 6291278 (2001-09-01), Xiang et al.
patent: 6420273 (2002-07-01), Lin
patent: 6515338 (2003-02-01), Inumiya et al.
patent: 6649455 (2003-11-01), Murakami
patent: 7307324 (2007-12-01), Uchiyama
patent: 2003-168732 (2003-06-01), None
patent: 2006-351582 (2006-12-01), None
patent: 2006-351978 (2006-12-01), None
Chinese Patent Office issued a Chinese Office Action dated Apr. 13, 2010, Application No. 200810188589.7.

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