Method of patterning a metal on a vertical sidewall of an...

Details Method of patterning a metal on a vertical sidewall of an... Method of patterning a metal on a vertical sidewall of an...

2011-04-19

2011-04-19

Smoot, Stephen W (Department: 2813)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C438S751000, C438S754000, C257SE21020

Reexamination Certificate

active

07927959

ABSTRACT:
A method of patterning a metal (141, 341, 841) on a vertical sidewall (132, 332, 832) of an excavated feature (130, 330, 830) includes placing a material (350) in the excavated feature such that a portion (435) of the metal is exposed in the excavated feature above the material, etching the exposed portion of the metal away from the vertical sidewall using a first wet etch chemistry, and removing the material from the excavated feature by etching it away using a second wet etch chemistry. The described method may be used to produce a MIM capacitor (800) suitable for an eDRAM device.

REFERENCES:
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patent: 7224014 (2007-05-01), Ichimura
patent: 2004/0152255 (2004-08-01), Seidl et al.
patent: 2005/0106809 (2005-05-01), Shea
patent: 2009/0191686 (2009-07-01), Wang et al.
patent: 10-2005-0006017 (2005-01-01), None
International Search Report and Written Opinion for PCT Patent Application No. PCT/US2009/058540, Mailed Apr. 23, 2010, 11 Pages.

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