Method for forming low dielectric constant fluorine-doped...

Details Method for forming low dielectric constant fluorine-doped... Method for forming low dielectric constant fluorine-doped...

2011-03-22

2011-03-22

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S631000, C438S687000, C438S780000, C438S794000, C257SE21264, C257SE21271, C257SE21277, C257SE21495, C257SE21596

Reexamination Certificate

active

07910475

ABSTRACT:
A method for forming a semiconductor device is provided. In one embodiment, the method includes providing a semiconductor substrate with a surface region. The surface region includes one or more layers overlying the semiconductor substrate. In addition, the method includes depositing a dielectric layer overlying the surface region. The dielectric layer is formed by a CVD process. Furthermore, the method includes forming a diffusion barrier layer overlying the dielectric layer. In addition, the method includes forming a conductive layer overlying the diffusion barrier layer. Additionally, the method includes reducing the thickness of the conductive layer using a chemical-mechanical polishing process. The CVD process utilizes fluorine as a reactant to form the dielectric layer. In addition, the dielectric layer is associated with a dielectric constant equal or less than 3.3.

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