Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2011-08-09
2011-08-09
Dang, Trung (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S698000, C257SE23069, C438S125000
Reexamination Certificate
active
07994631
ABSTRACT:
A substrate for an integrated circuit package is disclosed. The substrate comprises a core comprising a first dielectric layer having a first thickness; conductive traces formed on the first dielectric layer for routing signals within the integrated circuit package, wherein the conductive traces have a second thickness; and a substrate support structure comprising conductive traces formed on the first dielectric layer, where the conductive traces of the substrate support structure have a third thickness which is greater than the second thickness. A method of forming an integrated circuit package is also disclosed.
REFERENCES:
patent: 7279798 (2007-10-01), Memis
patent: 2007/0057363 (2007-03-01), Nakamura et al.
patent: 2009/0178271 (2009-07-01), Egitto et al.
U.S. Appl. No. 12/129,527, filed May 29, 2008 , Wu, Paul, Y., Xilinx, Inc., 2100 Logic Drive, San Jose, CA.
Dang Trung
King John J.
Xilinx , Inc.
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