Method of reducing erosion of a metal cap layer during via...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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C257S758000, C257S762000, C257SE23142

Reexamination Certificate

active

07986040

ABSTRACT:
During the patterning of via openings in sophisticated metallization systems of semi-conductor devices, the opening may extend through a conductive cap layer and an appropriate ion bombardment may be established to redistribute material of the underlying metal region to exposed sidewall portions of the conductive cap layer, thereby establishing a protective material. Consequently, in a subsequent wet chemical etch process, the probability for undue material removal of the conductive cap layer may be greatly reduced.

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Translation of Official Communication from German Patent Office for German Patent Application No. 10 2008 021 568.6 dated Oct. 24, 2008.

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