Flip-chip mounting method and bump formation method

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C438S108000, C438S613000, C438S678000, C228S180220, C257S738000, C257S772000, C257S778000, C257S779000, C257SE21508

Reexamination Certificate

active

07927997

ABSTRACT:
To provide a flip-chip mounting method and a bump formation method applicable to flip-chip mounting of a next generation LSI and having high productivity and high reliability.A semiconductor chip20having a plurality of electrode terminals12is held to oppose a circuit board21having a plurality of connection terminals11with a given gap provided therebetween, and the semiconductor chip20and the circuit board21in this state are dipped in a dipping bath40containing a melted resin14including melted solder particles for a given period of time. In this dipping process, the melted solder particles self-assemble between the connection terminals11of the circuit board21and the electrode terminals12of the semiconductor chip20, so as to form connectors22between these terminals. Thereafter, the semiconductor chip20and the circuit board21are taken out of the dipping bath40, and the melted resin14having permeated into the gap between the semiconductor chip20and the circuit board21is cured, so as to complete a flip-chip mounting body.

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