Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-04-19
2011-04-19
Louie, Wai-Sing (Department: 2814)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S108000, C438S613000, C438S678000, C228S180220, C257S738000, C257S772000, C257S778000, C257S779000, C257SE21508
Reexamination Certificate
active
07927997
ABSTRACT:
To provide a flip-chip mounting method and a bump formation method applicable to flip-chip mounting of a next generation LSI and having high productivity and high reliability.A semiconductor chip20having a plurality of electrode terminals12is held to oppose a circuit board21having a plurality of connection terminals11with a given gap provided therebetween, and the semiconductor chip20and the circuit board21in this state are dipped in a dipping bath40containing a melted resin14including melted solder particles for a given period of time. In this dipping process, the melted solder particles self-assemble between the connection terminals11of the circuit board21and the electrode terminals12of the semiconductor chip20, so as to form connectors22between these terminals. Thereafter, the semiconductor chip20and the circuit board21are taken out of the dipping bath40, and the melted resin14having permeated into the gap between the semiconductor chip20and the circuit board21is cured, so as to complete a flip-chip mounting body.
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Hirano Koichi
Ichiryu Takashi
Karashima Seiji
Nakatani Seiichi
Tomita Yoshihiro
Louie Wai-Sing
McDermott Will & Emery LLP
Montalvo Eva Yan
Panasonic Corporation
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