Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-05-03
2011-05-03
Sandvik, Benjamin P (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29257, C257SE29262
Reexamination Certificate
active
07936015
ABSTRACT:
A single crystal semiconductor layer of a first conduction type is disposed on a surface of a semiconductor substrate. A plurality of trenches are provided in the semiconductor layer to form a plurality of first semiconductor regions of the first conduction type at intervals in a direction parallel to the surface. An epitaxial layer is buried in the plurality of trenches to form a plurality of second semiconductor regions of a second conduction type. The plurality of second semiconductor regions each includes an outer portion with a high impurity concentration formed against an inner wall of the trench, and an inner portion with a low impurity concentration formed inner than the outer portion.
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Matsuda Tetsuo
Saito Wataru
Tokano Kenichi
Kabushiki Kaisha Toshiba
Kuo W. Wendy
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Sandvik Benjamin P
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