Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-09
2011-08-09
Fahmy, Wael M (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S903000
Reexamination Certificate
active
07994583
ABSTRACT:
A semiconductor device according to an aspect of the invention comprises an n-type FinFET which is provided on a semiconductor substrate and which includes a first fin, a first gate electrode crossing a channel region of the first fin via a gate insulating film in three dimensions, and contact regions provided at both end of the first fin, a p-type FinFET which is provided on the semiconductor substrate and which includes a second fin, a second gate electrode crossing a channel region of the second fin via a gate insulating film in three dimensions, and contact regions provided at both end of the second fin, wherein the n- and the p-type FinFET constitute an inverter circuit, and the fin width of the contact region of the p-type FinFET is greater than the fin width of the channel region of the n-type FinFET.
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Fahmy Wael M
Kabushiki Kaisha Toshiba
Kalam Abul
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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