Method for driving ferroelectric memory device,...

Details Method for driving ferroelectric memory device,... Method for driving ferroelectric memory device,...

2011-05-24

2011-05-24

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S189040

Reexamination Certificate

active

07948788

ABSTRACT:
A method for driving a ferroelectric memory device having a plurality of memory cells that store data and a memory cell for flag is provided. The method includes, upon writing to the plurality of memory cells, the steps of: reading data from the plurality of memory cells and the memory cell for flag; judging as to whether the data readout from the memory cell for flag is specified data; overwriting write data to the plurality of memory cells, and writing reverse data of the specified data to the memory cell for flag, when the data readout from the memory cell for flag is the specified data; and rewriting the data readout from the plurality of memory cells to the plurality of memory cells, and writing the reverse data to the memory cell for flag, when the data readout from the memory cell for flag is the reverse data.

REFERENCES:
patent: 6606261 (2003-08-01), Gudesen et al.
patent: 2003/0235066 (2003-12-01), Forbes
patent: 2001-331371 (2001-11-01), None
patent: 2003-91988 (2003-03-01), None

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