Non-volatile memory circuit using ferroelectric capacitor...

Static information storage and retrieval – Systems using particular element – Ferroelectric

Reexamination Certificate

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C365S149000, C365S189150, C365S189160, C365S222000

Reexamination Certificate

active

07924599

ABSTRACT:
A non-volatile memory cell and related system utilize ferroelectric capacitors as data storage elements. Circuitry is provided for writing to a single ferroelectric capacitor storage element, as well as to dual storage elements operating inversely. The storage elements are read by use of a sense amplifier in a configuration which automatically restores the original data states, thereby eliminating the need for a subsequent restore operation. Memory systems are described which include circuitry for driving bit lines, word lines and drive lines to accomplish both the write and read operations.

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