Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257SE29170, C257SE29300, C257SE29168

Reexamination Certificate

active

07928500

ABSTRACT:
A semiconductor device includes a tunnel insulating film formed on a semiconductor substrate, a floating gate electrode formed on the tunnel insulating film, an inter-electrode insulating film formed on the floating gate electrode, and a control gate electrode formed on the inter-electrode insulating film, wherein the inter-electrode insulating film includes a main insulating film and a plurality of nano-particles in the main insulating film.

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patent: 05-129625 (1993-05-01), None

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