Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2011-04-12
2011-04-12
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Resistive
C365S163000
Reexamination Certificate
active
07924600
ABSTRACT:
A method is described for operating a bistable resistance random access memory having two memory layer stacks that are aligned in series is disclosed. The bistable resistance random access memory comprises two memory layer stacks per memory cell, the bistable resistance random access memory operates in four logic states, a logic “00” state, a logic “01” state, a logic “10” state and a logic “11” state. The relationship between the four different logic states can be represented mathematically by the two variables n and f and a resistance R. The logic “0” state is represented by a mathematical expression (1+f)R. The logic “1” state is represented by a mathematical expression (n+f)R. The logic “2” state is represented by a mathematical expression (1+nf)R. The logic “3” state is represented by a mathematical expression n(1+f)R.
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Ho Chia-Hua
Hsieh Kuang Yeu
Lai Erh-Kun
Haynes Beffel & Wolfeld
Macronix International Co. Ltd.
Nguyen Tan T.
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