Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-03-29
2011-03-29
Le, Thao X (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
07915651
ABSTRACT:
A double-injection field-effect transistor has an anode, a cathode, a substantially transparent channel, a substantially transparent gate insulator, and at least one substantially transparent gate electrode. The transistor may also have a substantially transparent anode and/or cathode. The transistor may also be formed on a substantially transparent substrate. Electrode contacts and electrical interconnection leads may also be substantially transparent. Methods for making and using such double-injection field-effect transistors are also disclosed.
REFERENCES:
patent: 6252245 (2001-06-01), Katz et al.
patent: 6603160 (2003-08-01), Zhang
patent: 6639279 (2003-10-01), Sung
patent: 6703688 (2004-03-01), Fitzergald
patent: 6812489 (2004-11-01), Kawachi et al.
patent: 7078749 (2006-07-01), Yang et al.
patent: 7087945 (2006-08-01), Nakai et al.
patent: 7180108 (2007-02-01), Kawase et al.
patent: 7256457 (2007-08-01), Hotta
patent: 7411209 (2008-08-01), Endo et al.
patent: 7514762 (2009-04-01), Deane
patent: 7768042 (2010-08-01), Park et al.
patent: 7838309 (2010-11-01), Wack et al.
patent: 1134811 (2001-09-01), None
Hewlett--Packard Development Company, L.P.
Jones Eric W
Le Thao X
LandOfFree
Transparent double-injection field-effect transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Transparent double-injection field-effect transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transparent double-injection field-effect transistor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2660506