Semiconductor device with isolation using impurity

Details Semiconductor device with isolation using impurity Semiconductor device with isolation using impurity

2011-01-25

2011-01-25

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S350000, C257S401000, C257SE29112, C257SE29264, C257SE27103

Reexamination Certificate

active

07875931

ABSTRACT:
In order to form a plurality of semiconductor elements over an insulating surface, in one continuous semiconductor layer, an element region serving as a semiconductor element and an element isolation region having a function to electrically isolate element regions from each other by repetition of PN junctions. The element isolation region is formed by selective addition of an impurity element of at least one or more kinds of oxygen, nitrogen, and carbon and an impurity element that imparts an opposite conductivity type to that of the adjacent element region in order to electrically isolate elements from each other in one continuous semiconductor layer.

REFERENCES:
patent: 5605847 (1997-02-01), Zhang
patent: 5886364 (1999-03-01), Zhang
patent: 5998838 (1999-12-01), Tanabe et al.
patent: 6258638 (2001-07-01), Tanabe et al.
patent: 6335540 (2002-01-01), Zhang
patent: 6388291 (2002-05-01), Zhang et al.
patent: 6433361 (2002-08-01), Zhang et al.
patent: 6441436 (2002-08-01), Wu et al.
patent: 6444508 (2002-09-01), Tanabe et al.
patent: 6573589 (2003-06-01), Zhang
patent: 6703267 (2004-03-01), Tanabe et al.
patent: 2003/0094669 (2003-05-01), Nakashima
patent: 2004/0038488 (2004-02-01), Mouli
patent: 2004/0096999 (2004-05-01), Lin et al.
patent: 2005/0023577 (2005-02-01), Ito
patent: 2005/0042825 (2005-02-01), Kitamura et al.
patent: 2006/0014332 (2006-01-01), Mouli
patent: 2007/0252233 (2007-11-01), Yamazaki et al.
patent: 2007/0252234 (2007-11-01), Kawamata et al.
patent: 10-242471 (1998-09-01), None

Affiliated with

Also associated with

Rating

Semiconductor device with isolation using impurity does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with isolation using impurity, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with isolation using impurity will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2660427