Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2011-07-12
2011-07-12
Nguyen, VanThu (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S226000
Reexamination Certificate
active
07978536
ABSTRACT:
Semiconductor memory device and method of operating the same includes an enable signal generator configured to generate first and second enable signals having activation timings determined in response to activation of an active command, the first enable signal being deactivated after a first time from a deactivation timing of the active command, and the second enable signal being deactivated after a second time longer than the first time from the deactivation timing of the active command. Internal voltage generators are configured to generate internal voltages. At least one of the internal voltage generators is turned on/off in response to the first enable signal, and at least one other of the internal voltage generators is turned on/off in response to the second enable signals.
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Blakely & Sokoloff, Taylor & Zafman
Hynix / Semiconductor Inc.
King Douglas
Nguyen Vanthu
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