Method of fabricating a field-effect transistor having...

Details Method of fabricating a field-effect transistor having... Method of fabricating a field-effect transistor having...

2011-03-01

2011-03-01

Everhart, Caridad M (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S757000, C257SE21626, C257SE21640, C257SE21627

Reexamination Certificate

active

07897501

ABSTRACT:
A method of fabricating a semiconductor device is disclosed. The method of fabricating a semiconductor device provides a semiconductor substrate; forming a gate stack overlying the semiconductor substrate; forming spacers each having a first inner spacer and a second outer spacer on sidewalls of the gate stack; forming a protective layer on sidewalls of the spacers, covering a part of the semiconductor substrate, wherein an etching selectivity of the protective layer is higher than that of the first inner spacer.

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