Method and device to vary growth rate of thin films over...

Details Method and device to vary growth rate of thin films over... Method and device to vary growth rate of thin films over...

2011-01-04

2011-01-04

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

C438S430000, C438S584000, C438S680000, C257SE21170, C257SE21171

Reexamination Certificate

active

07863198

ABSTRACT:
Methods and devices for controlling a growth rate of films in semiconductor structures are shown. Chemical vapor deposition methods and devices include the use of a reaction inhibitor that selectively varies a deposition rate along a surface. One specific method includes atomic layer deposition. One method shown provides high step coverage over features such as trenches in trench plate capacitors. Also shown are methods and devices to provide uniform batch reactor layer thicknesses. Also shown are methods for forming alloy layers with high control over composition. Also shown are methods to selectively control growth rate to provide growth only on selected surfaces.

REFERENCES:
patent: 6093638 (2000-07-01), Cho et al.
patent: 2002/0160585 (2002-10-01), Park
patent: 2004/0203254 (2004-10-01), Conley et al.
patent: 2004/0221807 (2004-11-01), Verghese et al.
patent: 2005/0074983 (2005-04-01), Shinriki et al.
patent: 2006/0022228 (2006-02-01), Hoshi et al.
patent: 2006/0121689 (2006-06-01), Basceri et al.

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