Organic thin film transistors

Details Organic thin film transistors Organic thin film transistors

2011-01-04

2011-01-04

Maldonado, Julio J (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S040000, C257S347000, C257S411000, C257SE51007, C257SE21625, C438S216000, C438S287000

Reexamination Certificate

active

07863694

ABSTRACT:
A thin film transistor having an improved gate dielectric layer is disclosed. The gate dielectric layer comprises a poly(hydroxyalkyl acrylate-co-acrylonitrile) based polymer. The resulting gate dielectric layer has a high dielectric constant and can be crosslinked. Higher gate dielectric layer thicknesses can be used to prevent current leakage while still having a large capacitance for low operating voltages. Methods for producing such gate dielectric layers and/or thin film transistors comprising the same are also disclosed.

REFERENCES:
patent: 2006/0011909 (2006-01-01), Kelley et al.
patent: 2006/0214154 (2006-09-01), Yang et al.

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