Method for forming a semiconductor film including a film...

Details Method for forming a semiconductor film including a film... Method for forming a semiconductor film including a film...

2011-06-14

2011-06-14

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C438S485000, C438S487000

Reexamination Certificate

active

07960252

ABSTRACT:
An apparatus for high-rate chemical vapor (CVD) deposition of semiconductor films comprises a reaction chamber for receiving therein a substrate and a film forming gas, a gas inlet for introducing the film forming gas into the reaction chamber, an incidence window in the reaction chamber for transmission of a laser sheet into the reaction chamber, a laser disposed outside the reaction chamber for generating the laser sheet and an antenna disposed outside the reaction chamber for generating a plasma therein. The film forming gas in the chamber is excited and decomposed by the laser sheet, which passes in parallel with the substrate along a plane spaced apart therefrom, and concurrent ionization effected by the antenna, thereby forming a dense semiconductor film on the substrate at high rate.

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Solanki, “Photodeposition of aluminum oxide and aluminum thin films,” Applied Physics Letters, 1983, pp. 454-456, vol. 43, issue 5, AIP.

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