Field effect transistor containing a wide band gap...

Details Field effect transistor containing a wide band gap... Field effect transistor containing a wide band gap...

2011-05-03

2011-05-03

Pert, Evan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

C257S339000, C257S409000, C257S616000, C257SE29039

Reexamination Certificate

active

07936042

ABSTRACT:
A field effect transistor comprising a silicon containing body is provided. After formation of a gate dielectric, gate electrode, and a first gate spacer, a drain side trench is formed and filled with a wide band gap semiconductor material. Optionally, a source side trench may be formed and filled with a silicon germanium alloy to enhance an on-current of the field effect transistor. Halo implantation and source and drain ion implantation are performed to form various doped regions. Since the wide band gap semiconductor material as a wider band gap than that of silicon, impact ionization is reduced due to the use of the wide band gap semiconductor material in the drain, and consequently, a breakdown voltage of the field effect transistor is increased compared to transistors employing silicon in the drain region.

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