Power semiconductor component with a drift zone and a...

Details Power semiconductor component with a drift zone and a... Power semiconductor component with a drift zone and a...

2011-01-11

2011-01-11

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S335000, C257S336000, C257S337000, C257S338000, C257S339000, C257S340000, C257S341000, C257S342000, C257S343000, C257S344000, C257S345000, C257S346000, C257S347000, C257S348000, C257S349000, C257SE27112, C257SE29147

Reexamination Certificate

active

07868396

ABSTRACT:
A power semiconductor component includes a drift zone in a semiconductor body, a component junction and a compensation zone. The component junction is disposed between the drift zone and a further component zone, which is configured such that when a blocking voltage is applied to the component junction, a space charge zone forms extending generally in a first direction in the drift zone. The compensation zone is disposed adjacent to the drift zone in a second direction and includes at least one high-dielectric material having a temperature-dependent dielectric constant. The temperature dependence of the compensation zone varies in the second direction.

REFERENCES:
patent: 102004007197 (2005-01-01), None
patent: WO 2005/078802 (2005-08-01), None
patent: WO 2005/078802 (2005-08-01), None
Morrison et al. “Ferroelectric Nanotubes.” Rev.Ad.Mater.Sci.4 Advanced Study Center Co. Ltd, 2003. pp. 114-122. (9 Pages).
Hilton et al. “Dielectric Properties of Bal-xSrxTiOc ceramics.” J. Phys. D: Appl. Phys.29. IOP Publishing Ltd, 1996. pp. 1321-1325. (5 Pages).

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