Self-releasing spring structures and methods

Details Self-releasing spring structures and methods Self-releasing spring structures and methods

2011-05-17

2011-05-17

Maldonado, Julio J (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S666000, C438S678000, C257SE21587, C257SE21592

Reexamination Certificate

active

07943504

ABSTRACT:
According to various exemplary embodiments, a spring device that includes a substrate, a self-releasing layer provided over the substrate and a stressed-metal layer provided over the self-releasing layer is disclosed, wherein an amount of stress inside the stressed-metal layer results in a peeling force that is higher than an adhesion force between the self-releasing layer and the stressed-metal layer. Moreover, a method of manufacturing a spring device, according to various exemplary embodiments, includes providing a substrate, providing a self-releasing layer over the substrate and providing a stressed-metal layer over the self-releasing layer wherein an amount of stress inside the stressed-metal layer results in a peeling force that is higher than an adhesion force between the self-releasing layer and the stressed-metal layer is also disclosed in this invention.

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Modi et al., “Effect of Adhesive Layer Properties on Interfacial Fracture in Thin-Film High-Density Interconnects,” ECTC, San Diego, California, 2002.

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