Semiconductor device and manufacturing method of...

Details Semiconductor device and manufacturing method of... Semiconductor device and manufacturing method of...

2011-08-30

2011-08-30

Luu, Chuong A. (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S369000, C257S314000, C257S315000

Reexamination Certificate

active

08008728

ABSTRACT:
In one aspect of the present invention, a semiconductor device may include a semiconductor substrate; an element isolation region provided in the semiconductor substrate and having an oxide layer and an oxidant-diffusion prevention layer provided on the oxide layer; a gate dielectric film provided on the semiconductor substrate and the oxidant-diffusion prevention layer; and a gate electrode provided on the gate dielectric film.

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patent: 6838374 (2005-01-01), Uenishi et al.
patent: 6888214 (2005-05-01), Mouli et al.
patent: 2006/0160322 (2006-07-01), Buehrer et al.
patent: 2007/0187778 (2007-08-01), Cannon et al.
patent: 5-218082 (1993-08-01), None

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